Drift region doping effects on high voltage conductivity modulated thin film transistors

Author

Kumar, A.K.P. ; Sin, Johnny K O ; Poon, Vincent M C

Author_Institution

Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Clear Water Bay, Hong Kong

fYear

1996

fDate

35245

Firstpage

37

Lastpage

40

Abstract

The effects of drift region doping on the high voltage (up to 100 V) characteristics of a CMTFT (conductivity modulated thin film transistor) is investigated. It is demonstrated that a non critical implant can be used to reduce the forward voltage drop of the transistor for longer drift region devices, and a favourable trade-off between the forward voltage drop and leakage current can be obtained by using the drift region doping. Results on non-optimized devices show that for devices with breakdown voltage of 100 V, an 8 times increase in drain to source current in doped CMTFT devices causes only a 30% increase in leakage current compared to the undoped devices

Keywords

electric breakdown; leakage currents; power field effect transistors; semiconductor doping; thin film transistors; 100 V; breakdown voltage; conductivity modulated thin film transistor; drift region doping; forward voltage drop; high voltage CMTFT; leakage current; Conductivity; Displays; Doping; Glass; Implants; Leakage current; Silicon compounds; Substrates; Thin film transistors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1996., IEEE Hong Kong

Print_ISBN

0-7803-3091-9

Type

conf

DOI

10.1109/HKEDM.1996.566301

Filename

566301