DocumentCode :
3512495
Title :
Characterisation of advanced multilayer de-embedding structures up to 50 GHz incorporating a novel validation standard
Author :
O´Sullivan, John A. ; McCarthy, Kevin G. ; Murphy, Patrick J.
Author_Institution :
Dept. of Electr. & Electron. Eng., Univ. Coll. Cork, Ireland
fYear :
2006
fDate :
6-9 March 2006
Firstpage :
59
Lastpage :
64
Abstract :
Modern multi-level metallisation schemes offer the possibility of many innovative structures for frequency characterisation and de-embedding. In this paper we perform a detailed characterisation of several such structures up to 50 GHz and show their application to measurements of a high performance HBT device. We further propose a consistency check, by comparing independent DC and s-parameter measurements, to gain further confidence in the de-embedding operations.
Keywords :
S-parameters; heterojunction bipolar transistors; semiconductor device metallisation; 50 GHz; DC measurement; HBT device; frequency characterisation; frequency deembedding; multilayer deembedding structures; multilevel metallisation; s-parameter measurement; BiCMOS integrated circuits; Educational institutions; Electrical resistance measurement; Heterojunction bipolar transistors; Impedance; Nonhomogeneous media; Radio frequency; Signal processing; Telephony; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronic Test Structures, 2006. ICMTS 2006. IEEE International Conference on
Print_ISBN :
1-4244-0167-4
Type :
conf
DOI :
10.1109/ICMTS.2006.1614276
Filename :
1614276
Link To Document :
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