Characterisation of advanced multilayer de-embedding structures up to 50 GHz incorporating a novel validation standard

Author

O´Sullivan, John A. ; McCarthy, Kevin G. ; Murphy, Patrick J.

Author_Institution

Dept. of Electr. & Electron. Eng., Univ. Coll. Cork, Ireland

fYear

2006

fDate

6-9 March 2006

Firstpage

59

Lastpage

64

Abstract

Modern multi-level metallisation schemes offer the possibility of many innovative structures for frequency characterisation and de-embedding. In this paper we perform a detailed characterisation of several such structures up to 50 GHz and show their application to measurements of a high performance HBT device. We further propose a consistency check, by comparing independent DC and s-parameter measurements, to gain further confidence in the de-embedding operations.

Keywords

S-parameters; heterojunction bipolar transistors; semiconductor device metallisation; 50 GHz; DC measurement; HBT device; frequency characterisation; frequency deembedding; multilayer deembedding structures; multilevel metallisation; s-parameter measurement; BiCMOS integrated circuits; Educational institutions; Electrical resistance measurement; Heterojunction bipolar transistors; Impedance; Nonhomogeneous media; Radio frequency; Signal processing; Telephony; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 2006. ICMTS 2006. IEEE International Conference on

Print_ISBN

1-4244-0167-4

Type

conf

DOI

10.1109/ICMTS.2006.1614276

Filename

1614276