Title :
Analysis of the energy structure of nitrogen δ-doped GaAs superlattices for high efficiency intermediate band solar cells
Author :
Noguchi, Shunsuke ; Yagi, Shuhei ; Hijikata, Yasuto ; Onabe, Kentaro ; Kuboya, Shigeyuki ; Yaguchi, Hiroyuki
Author_Institution :
Grad. Sch. of Sci. & Eng., Saitama Univ., Saitama, Japan
Abstract :
Nitrogen δ-doped GaAs superlattices were fabricated and their energy structures were investigated. Several transitions related to E+ band of nitrogen δ-doped regions were observed in photoreflectance (PR) spectra at energies ranging 1.5-1.7 eV for the superlattices at which no transitions were observed for uniformly doped GaAsN. The PR signal intensity of E+ related band transitions is significantly higher than those observed in uniformly doped GaAsN. This enhancement of E+ related band transitions is advantageous as an intermediate band material, and thus, nitrogen δ-doped GaAs superlattice structures are expected to be an excellent alternative for the use of intermediate band solar cells.
Keywords :
III-V semiconductors; gallium arsenide; nitrogen; photoreflectance; semiconductor superlattices; solar cells; GaAs:N; PR signal intensity; PR spectra; electron volt energy 1.5 eV to 1.7 eV; energy structure analysis; high efficiency intermediate band solar cells; intermediate band material; nitrogen δ-doped GaAs superlattices; photoreflectance spectra; superlattice structures; Gallium arsenide; Metals; Nitrogen; Optical sensors; Optical superlattices; Photovoltaic cells; doping; gallium arsenide; nanostructure; semiconductor; solar energy; spectroscopy; superlattices;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4673-0064-3
DOI :
10.1109/PVSC.2012.6317573
