Analysis of the energy structure of nitrogen δ-doped GaAs superlattices for high efficiency intermediate band solar cells

Author

Noguchi, Shunsuke ; Yagi, Shuhei ; Hijikata, Yasuto ; Onabe, Kentaro ; Kuboya, Shigeyuki ; Yaguchi, Hiroyuki

Author_Institution

Grad. Sch. of Sci. & Eng., Saitama Univ., Saitama, Japan

fYear

2012

fDate

3-8 June 2012

Abstract

Nitrogen δ-doped GaAs superlattices were fabricated and their energy structures were investigated. Several transitions related to E₊ band of nitrogen δ-doped regions were observed in photoreflectance (PR) spectra at energies ranging 1.5-1.7 eV for the superlattices at which no transitions were observed for uniformly doped GaAsN. The PR signal intensity of E₊ related band transitions is significantly higher than those observed in uniformly doped GaAsN. This enhancement of E₊ related band transitions is advantageous as an intermediate band material, and thus, nitrogen δ-doped GaAs superlattice structures are expected to be an excellent alternative for the use of intermediate band solar cells.

Keywords

III-V semiconductors; gallium arsenide; nitrogen; photoreflectance; semiconductor superlattices; solar cells; GaAs:N; PR signal intensity; PR spectra; electron volt energy 1.5 eV to 1.7 eV; energy structure analysis; high efficiency intermediate band solar cells; intermediate band material; nitrogen δ-doped GaAs superlattices; photoreflectance spectra; superlattice structures; Gallium arsenide; Metals; Nitrogen; Optical sensors; Optical superlattices; Photovoltaic cells; doping; gallium arsenide; nanostructure; semiconductor; solar energy; spectroscopy; superlattices;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE

Conference_Location

Austin, TX

ISSN

0160-8371

Print_ISBN

978-1-4673-0064-3

Type

conf

DOI

10.1109/PVSC.2012.6317573

Filename

6317573