DocumentCode
3512556
Title
Simplified loss analysis for high speed SiC MOSFET inverter
Author
Shen, Miaosen ; Krishnamurthy, Shashank
Author_Institution
United Technol. Res. center, East Hartford, CT, USA
fYear
2012
fDate
5-9 Feb. 2012
Firstpage
1682
Lastpage
1687
Abstract
SiC devices provide significant performance improvement compared to traditional Si devices, such as lower conduction loss and higher switching speed. The ability to accurately predict converter loss is essential for converter design. This paper provides a simplified loss model, which enables users to calculate converter loss based on datasheet values. Also, it provides insight to major switching loss contributors.
Keywords
MOSFET; invertors; power convertors; silicon compounds; wide band gap semiconductors; SiC; converter loss calculation; converter loss prediction design; high speed MOSFET inverter; higher switching speed; lower conduction loss; simplified loss model analysis; switching loss contributor; Inverters; Logic gates; Loss measurement; MOSFET circuits; Silicon carbide; Switches; Switching loss;
fLanguage
English
Publisher
ieee
Conference_Titel
Applied Power Electronics Conference and Exposition (APEC), 2012 Twenty-Seventh Annual IEEE
Conference_Location
Orlando, FL
Print_ISBN
978-1-4577-1215-9
Electronic_ISBN
978-1-4577-1214-2
Type
conf
DOI
10.1109/APEC.2012.6166047
Filename
6166047
Link To Document