Title :
Carriers multiplication in neighboring surfactant-free silicon nanocrystals produced by 3D-surface engineering in liquid medium.
Author :
Svrcek, Vladimir ; Mariotti, Davide ; Matsubara, Keigo ; Kondo, Makoto
Author_Institution :
Res. Center for Photovoltaics, Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan
Abstract :
Carriers multiplication in silicon nanocrystals (Si-ncs) in a one promising eefect to considerably enhance conversion efficiency of solar cells that can overcome theoretical limits. A close proximity of Si-ncs is an essential factor for carrier multiplication due to the separated quantum cutting effect. In this study we present results on investigation of 3-dimensional (3D) surface engineering of Si-ncs directly in water. Thus at the same time allow close proximity Si-ncs without of using any surfactant. The approach is based on ns laser treatment of Si-ncs dispersed in liquid solution. We explore the excitation wavelength dependence of photoluminescence quantum yield (ratio of the number of emitted and absorbed photons) for Si-ncs as prepared and surface engineered by ns laser processing. Our results suggest that close proximity of Si-ncs in spherical particles induced by laser processing might enhance also carriers multiplication.
Keywords :
colloids; elemental semiconductors; laser materials processing; nanofabrication; nanostructured materials; photoluminescence; semiconductor growth; silicon; 3D-surface engineering; Si; absorbed photons; carrier multiplication; dispersion; emitted photons; excitation wavelength; liquid medium; liquid solution; neighboring surfactant-free silicon nanocrystals; ns laser processing; photoluminescence quantum yield; quantum cutting effect; solar cells; spherical particles; water; Laser excitation; Nanocrystals; Photonics; Silicon; Surface emitting lasers; Surface engineering; Surface treatment; carrier multiplication; silicon nanocrystals; surface engineering;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4673-0064-3
DOI :
10.1109/PVSC.2012.6317577