Title :
Temperature dependent Pspice model of silicon carbide power MOSFET
Author :
Cui, Yutian ; Chinthavali, Madhu ; Tolbert, Leon M.
Author_Institution :
Univ. of Tennessee, Knoxville, TN, USA
Abstract :
This paper provides a behavioral model in Pspice for a silicon carbide (SiC) power MOSFET rated at 1200 V / 30 A for a wide temperature range. The Pspice model was built using device parameters extracted through experiment. The static and dynamic behavior of the SiC power MOSFET is simulated and compared to the measured data to show the accuracy of the Pspice model. The temperature dependent behavior was simulated and analyzed. Also, the effect of the parasitics of the circuit on switching behavior was simulated and discussed.
Keywords :
SPICE; power MOSFET; silicon compounds; SiC; circuit parasitic effect; current 30 A; dynamic behavior; silicon carbide power MOSFET; static behavior; switching behavior; temperature-dependent Pspice model; voltage 1200 V; Integrated circuit modeling; Logic gates; Mathematical model; Power MOSFET; Resistance; Silicon carbide;
Conference_Titel :
Applied Power Electronics Conference and Exposition (APEC), 2012 Twenty-Seventh Annual IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
978-1-4577-1215-9
Electronic_ISBN :
978-1-4577-1214-2
DOI :
10.1109/APEC.2012.6166050
