DocumentCode :
3512749
Title :
MEMS test structure for measuring thermal conductivity of thin films
Author :
La Spina, L. ; Nenadovic, N. ; van Herwaarden, A.W. ; Schellevis, H. ; Wien, W.H.A. ; Nanver, L.K.
Author_Institution :
DIMES, Delft Univ. of Technol., Netherlands
fYear :
2006
fDate :
6-9 March 2006
Firstpage :
137
Lastpage :
142
Abstract :
A novel MEMS test structure and measurement procedure is presented with which the lateral thermal conductivity of thin films can be easily and accurately extracted. The extraction procedure is discussed in detail and supported by numerical simulations. Experimental examples are given for the determination of the lateral thermal conductivity of aluminium (Al), aluminium nitride (AlN), and p-doped polysilicon (polySi) thin films.
Keywords :
aluminium; aluminium compounds; elemental semiconductors; micromechanical devices; silicon; thermal conductivity measurement; thin films; MEMS test structure; aluminium nitride thin films; microelectromechanical devices; p-doped polysilicon thin films; thermal conductivity measurment; Aluminum; Conducting materials; Conductivity measurement; Micromechanical devices; Resistors; Silicon; Testing; Thermal conductivity; Transistors; US Department of Transportation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronic Test Structures, 2006. ICMTS 2006. IEEE International Conference on
Print_ISBN :
1-4244-0167-4
Type :
conf
DOI :
10.1109/ICMTS.2006.1614291
Filename :
1614291
Link To Document :
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