Title :
Effects of self-heating and thermal-coupling on the performance of AlGaAs/GaAs heterojunction bipolar transistors
Author :
Liou, J.J. ; Huang, C.I.
Author_Institution :
Dept. of Electr. & Comput. Eng., Central Florida Univ., Orlando, FL, USA
Abstract :
A numerical analysis is presented to investigate the effects of different base and collector structures on the dc and ac performance of AlGaAs/GaAs multi-finger heterojunction bipolar transistors (HBTs). The results show that different structures give rise to different electric fields in the base-collector junction and lattice temperatures in the HBT, which consequently affect the HBT´s cutoff frequency and current gain, respectively. The physical mechanisms contributing to these differences are also discussed in detail
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; AlGaAs-GaAs; base-collector junction; current gain; cutoff frequency; electric field; lattice temperature; multi-finger heterojunction bipolar transistor; numerical analysis; self-heating; thermal coupling; Cutoff frequency; Fingers; Gallium arsenide; Heterojunction bipolar transistors; Lattices; Medical simulation; Poisson equations; Temperature; Thermal conductivity; Thermal force;
Conference_Titel :
Electron Devices Meeting, 1996., IEEE Hong Kong
Print_ISBN :
0-7803-3091-9
DOI :
10.1109/HKEDM.1996.566303
