Title :
Effect of sulphur variation in AgInS2 thin films prepared by chemical spray pyrolysis
Author :
Sunil, M. Anantha ; Deepa, K.G. ; Nagaraju, J.
Author_Institution :
Indian Inst. of Sci., Bangalore, India
Abstract :
AgInS2 thin films are deposited by chemical spray pyrolysis technique. Aqueous solution of Silver Nitrate (AgNO3), Indium Chloride (InCl3), and Thiourea (CS (NH2)2) are used as the precursors and substrate temperature is kept at 3500C. Effect of variation in sulfur concentration was studied by varying the [S2-]/ [In3+] ratio. Orthorhombic structured AgInS2 with preferred orientation along (0 0 2) plane is identified using XRD. Even though the crystallinity decreased with increase in sulfur concentration, Ag2O3 phase which was observed in the sulfur poor sample was found to be disappeared for higher Sulfur concentration. EDAX data revealed nearly stoichiometric films for [S2-]/ [In3+] ratio 5, with atomic percentage of 26.69, 23.80, 49.81 for Ag, In, S respectively. SEM images show a gradual change from non-spherical to spherical grains with increase in sulfur concentration. Band gap measured was in the range 1.85 to 2.03 eV.
Keywords :
X-ray chemical analysis; X-ray diffraction; energy gap; indium compounds; scanning electron microscopy; semiconductor growth; semiconductor thin films; silver compounds; spray coating techniques; stoichiometry; ternary semiconductors; AgInS2; EDAX data; SEM images; XRD; aqueous solution; band gap; chemical spray pyrolysis technique; electron volt energy 1.85 eV to 2.03 eV; indium chloride; nonspherical phase; orthorhombic structure; silver nitrate; spherical grains; stoichiometric films; substrate temperature; sulfur concentration; sulphur variation effect; temperature 3500 degC; thin film deposition; thin film preparation; thiourea; Chemicals; Films; Indium; Photonic band gap; Photovoltaic cells; Silver; Substrates; Absorber layer; AgInS2; Chemical spray pyrolysis; Morphology; Optical properties; Orthorhombic structure;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4673-0064-3
DOI :
10.1109/PVSC.2012.6317594
