DocumentCode :
3512997
Title :
Reaction between sodium and selenium in Bridgman-grown CuInSe2
Author :
Myers, Hadley F. ; Champness, Clifford H. ; Shih, Ishiang
Author_Institution :
McGill Univ., Montréal, QC, Canada
fYear :
2012
fDate :
3-8 June 2012
Abstract :
In the fabrication of CIGS-based solar cells, the incorporation of sodium to increase performance is now standard practice. Because grain boundaries may play a role in the Na action, in this laboratory, studies have been made of the effects of introducing Na into a melt of composition CuInSe2+x to obtain Bridgman-grown monocrystals. It was found that if the added Na exceeds a critical value, [Na]crit, the resulting material changes from p- to n-type. The quantity [Na]crit is almost proportional to x, the excess of Se over stoichiometry according to the formula [Na]crit= (2x+δ)/(1+2x+δ). This can be explained by the strong affinity of Na for Se to form Na2Se-like compounds, starving the ternary of Se to produce a Se-deficient and therefore n-type chalcopyrite. This conclusion is based on measurements of transport properties, along with XRD, SEM/EDX measurements. On the monocrystal surfaces, CuIn3Se5 was detected by XPS.
Keywords :
X-ray chemical analysis; X-ray diffraction; X-ray photoelectron spectra; copper compounds; crystal growth from melt; crystal structure; electrical conductivity; grain boundaries; indium compounds; scanning electron microscopy; semiconductor growth; sodium; stoichiometry; ternary semiconductors; thermoelectric power; Bridgman-grown monocrystals; CuIn3Se5:Na; SEM-EDX; X-ray diffraction; X-ray photoelectron spectra; XPS; XRD; energy dispersive X-ray spectra; grain boundaries; n-type chalcopyrite; p-type material; scanning electron microscopy; selenium; sodium; solar cells; stoichiometry; thermoelectric power; transport properties; Compounds; Crystals; Films; Surface treatment; Temperature measurement; X-ray scattering; Bridgman-growth; CuInSe2; monocrystalline; selenium; sodium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE
Conference_Location :
Austin, TX
ISSN :
0160-8371
Print_ISBN :
978-1-4673-0064-3
Type :
conf
DOI :
10.1109/PVSC.2012.6317596
Filename :
6317596
Link To Document :
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