The effect of Na ion implantation on the polycrystalline CuIn1−xGaxSe2

Author

Wu, Wan-Yao ; Chen, Chia-Hsiang ; Hsu, Chia-Hao ; Wei, Shih-Yuan ; Chen, Chien-Hsu ; Wu, Yun-Chung ; Hong, Tian-Jue ; Niu, Huan ; Lai, Chih-Huang

Author_Institution

Dept. of Mater. Sci. & Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan

fYear

2012

fDate

3-8 June 2012

Abstract

In this work, Ion implantation was applied for quantitative and spatial control of Na distribution in CIGS films. Local Na-doped layer near the CIGS surface was observed in secondary ion mass spectroscopy (SIMS) depth-profile. Implantation-induced lattice displacement and recovery processes by rapid thermal annealing were characterized by Raman spectroscopy and grazing incident X-ray diffraction. Post annealing process and annealing during implantation both can reduce implantation-induced displacement well. In the preliminary work, Na-implanted CIGS film lead to an enhancement in electrical properties of device.

Keywords

Raman spectra; X-ray diffraction; copper compounds; gallium compounds; indium compounds; ion implantation; rapid thermal annealing; recovery; secondary ion mass spectra; semiconductor thin films; sodium; ternary semiconductors; CuIn_1-xGa_xSe₂:Na; Implantation-induced lattice displacement; Raman spectroscopy; SIMS; electrical properties; grazing incident X-ray diffraction; ion implantation effect; polycrystalline films; rapid thermal annealing; recovery processes; secondary ion mass spectroscopy depth-profile; Films; Ion implantation; Lattices; Mass spectroscopy; Rapid thermal annealing; CuIn1−xGaxSe2; Ion implantation; Sodium;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE

Conference_Location

Austin, TX

ISSN

0160-8371

Print_ISBN

978-1-4673-0064-3

Type

conf

DOI

10.1109/PVSC.2012.6317597

Filename

6317597