Title :
Effect of base potential distribution on thermal runaway and the power limitation of the heterojunction bipolar transistor with circular dot geometry
Author :
Liou, L.L. ; Jenkins, T. ; Huang, C.I.
Author_Institution :
Solid State Electron. Directorate, Wright Lab., Wright-Patterson AFB, OH, USA
Abstract :
The dc power limitation of heterojunction bipolar transistor (HBT) with dot geometry is studied theoretically using combined electro-thermal and transmission line models. In most cases, thermal runaway occurs at a power level lower than the limit set by the intrinsic electronic property of the device. The inter-relation among the maximum operational power, emitter ballast resistance and emitter dot radius are established and discussed. The discussion is based on the theory of junction-temperature-rise-threshold for the thermal runaway and the base potential distribution in the emitter-base junction
Keywords :
heterojunction bipolar transistors; semiconductor device models; DC power; base potential distribution; circular dot geometry; electro-thermal model; emitter ballast resistance; emitter dot radius; emitter-base junction; heterojunction bipolar transistor; junction-temperature-rise-threshold; thermal runaway; transmission line model; Electric resistance; Electromagnetic heating; Electronic ballasts; Geometry; Heterojunction bipolar transistors; Microwave devices; Power transmission lines; Temperature; Transmission line theory; Voltage;
Conference_Titel :
Electron Devices Meeting, 1996., IEEE Hong Kong
Print_ISBN :
0-7803-3091-9
DOI :
10.1109/HKEDM.1996.566306
