DocumentCode :
3513333
Title :
Characterization of ZnS films deposited by ALD for CIGS solar cells
Author :
Erkaya, Yunus ; Hegde, Nitin ; Aryal, Krishna ; Rajan, Grace ; Boland, Patrick ; Ranjan, Vikash ; Baumgart, Helmut ; Collins, Robert W. ; Marsillac, Sylvain
Author_Institution :
Dept. of Electr. & Comput. Eng., Old Dominion Univ., Norfolk, VA, USA
fYear :
2012
fDate :
3-8 June 2012
Abstract :
Alternative deposition methods and materials are of interest for the fabrication of thin film solar cells since they offer potential enhancements for either low cost, high speed or high efficiency but also because they can help in better understanding the underlying physical and chemical processes that could lead to the next generation of solar cells. In this study, we will present new results on the deposition of ZnS by atomic layer deposition (ALD) as an alternate to CdS deposited by chemical bath deposition.
Keywords :
III-VI semiconductors; atomic layer deposition; solar cells; ALD; CIGS solar cells; ZnS; alternative deposition methods; atomic layer deposition; chemical bath deposition; chemical processes; films characterization; physical processes; thin film solar cells fabrication; Atomic layer deposition; Films; Gain measurement; Rotation measurement; Thickness measurement; X-ray scattering; complex dielectric function; optical device characterization; photovoltaic cells; thin film devices;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE
Conference_Location :
Austin, TX
ISSN :
0160-8371
Print_ISBN :
978-1-4673-0064-3
Type :
conf
DOI :
10.1109/PVSC.2012.6317612
Filename :
6317612
Link To Document :
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