Title : 
Towards cost-effective antireflective-coating and surface-texturing
         
        
            Author : 
Matsumoto, Yasuhiro ; Urbano, J. Antonio ; Ortega, Mauricio ; Barrera, Enrique ; Romero-Paredes, Gabriel
         
        
            Author_Institution : 
Dept. de Ing. Electr., CINVESTAV-IPN, Mexico City, Mexico
         
        
        
        
            Abstract : 
Methods for reducing surface reflectance in crystalline-silicon (c-Si) based solar cells is briefly reviewed. In general, an antireflection coating (ARC) is designed for normal light incidence, which consists of a single quarter-wavelength (λ/4) layer with a proper optical transparency. Theoretical and experimental comparisons were carried out for both, single and double ARC using silicon nitride (SiNx) and silicon oxide (SiOx). Double ARC for MgF/CeO, ZnS, TiOx is also considered to compare with the previous coatings. Solar cell surface texturization and its effects are also discussed. Concepts of reactive ion etching (RIE) and its performances on c-Si based surfaces are viewed. Finally, graded-index ARC performances as a function of light incidence angles are discussed.
         
        
            Keywords : 
coatings; silicon compounds; solar cells; surface texture; titanium compounds; zinc compounds; SiN; SiO; TiO; ZnS; cost-effective antireflective-coating; crystalline-silicon based solar cells; graded-index ARC performances; light incidence angles function; reactive ion etching; silicon nitride; silicon oxide; single quarter-wavelength layer; solar cell surface texturization; surface reflectance; surface-texturing; Chemicals; Indexes; Resistance; Sulfur hexafluoride; Antireflective coat; incidence angle; refraction index;
         
        
        
        
            Conference_Titel : 
Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE
         
        
            Conference_Location : 
Austin, TX
         
        
        
            Print_ISBN : 
978-1-4673-0064-3
         
        
        
            DOI : 
10.1109/PVSC.2012.6317615