Mapping of the dopant compensation effects on the reverse and forward characteristics of solar cells

The effect of doping compensation on the electrical and photovoltaic properties of Silicon (Si) wafers and solar cells are mapped on peculiar wafers taken from a highly doped and compensated ingot. Extensive mapping characterizations were performed at the material (carrier density and mobility) and at the solar cell levels (I-V parameters under illumination, breakdown voltages). One of the striking features of this work is that, despite the high concentrations of doping impurities in the substrates, most solar cells feature breakdown voltages high enough to allow standard module architectures to be used.