Title :
Novel Ga0.47In0.53As metal-semiconductor-metal photodetectors grown by metalorganic vapor phase epitaxy
Author :
Chan, P.T. ; Choy, H.S. ; Shu, C. ; Hsu, C.C.
Author_Institution :
Dept. of Electron. Eng., Chinese Univ. of Hong Kong, Shatin, Hong Kong
Abstract :
InP-Ga0.47In0.53As-InP metal-semiconductor-metal photodetectors grown with an additional barrier enhancement layer of Al0.1In0.9P exhibited a reduction of leakage current and an increase in breakdown voltage. The devices had a DC responsivity of 0.32 A/W and an intrinsic response faster than 74 ps at 1.3 μm
Keywords :
III-V semiconductors; Schottky barriers; electric breakdown; gallium arsenide; indium compounds; leakage currents; metal-semiconductor-metal structures; optical receivers; photodetectors; semiconductor growth; semiconductor-metal boundaries; vapour phase epitaxial growth; 1.3 micron; 74 ps; Al0.1In0.9P; InP-Ga0.47In0.53As-InP; MOVPE growth; MSM photodetectors; barrier enhancement layer; breakdown voltage; leakage current reduction; metal-semiconductor-metal photodetectors; metalorganic vapor phase epitaxy; Detectors; Electrodes; Epitaxial growth; Gold; Indium phosphide; Leakage current; Optical saturation; Photodetectors; Schottky barriers; Voltage;
Conference_Titel :
Electron Devices Meeting, 1996., IEEE Hong Kong
Print_ISBN :
0-7803-3091-9
DOI :
10.1109/HKEDM.1996.566309
