Title :
Research overview and application trend in ferroelectric thin films
Author_Institution :
Korea Adv. Inst. of Sci. & Technol., Seoul, South Korea
Abstract :
Ferroelectric thin films have been attractive for multifunctional device because of not only their unique characteristics of ferroelectrics but also the potential of process integration according to development of thin film technology. Nonvolatile memory (FeRAM) using hysteresis behavior, DRAM using high permittivity, microactuator using piezoelectricity, infrared sensor using pyroelectricity, optical switch shutter display, etc. are being studied by many international researchers because of high possibility of applications. The (Ba,Sr)TiO 3 system is the material of the highest potential application for DRAM device and the research on FeRAM has been extensively done on the basis of PZT system and SrBi2Ta2O9 system
Keywords :
ferroelectric thin films; reviews; (BaSr)TiO3; DRAM; FeRAM; PZT; PbZrO3TiO3; SrBi2Ta2O9; ferroelectric thin film; hysteresis; infrared sensor; microactuator; multifunctional device; nonvolatile memory; optical switch shutter display; permittivity; piezoelectricity; process integration; pyroelectricity; Ferroelectric films; Ferroelectric materials; Hysteresis; Microactuators; Nonvolatile memory; Permittivity; Piezoelectric films; Random access memory; Thin film devices; Transistors;
Conference_Titel :
Properties and Applications of Dielectric Materials, 1997., Proceedings of the 5th International Conference on
Conference_Location :
Seoul
Print_ISBN :
0-7803-2651-2
DOI :
10.1109/ICPADM.1997.616611
