Simulation of single-junction thin-film silicon solar cells with varying intrinsic layer thickness

Optical and electrical simulation is an economical method for optimizing the layer thicknesses of silicon based thin-film solar cells. However, the used electrical parameter set must be verified for different layer stack configurations to calibrate the modeling system. In this contribution we present an electrical parameter set as input data, which is able to model dark and illuminated IV-curves and EQE-spectra of a-Si:H single junction solar cells with different intrinsic layer thicknesses. Only few parameters are varied to align the experimental characteristics of the solar cells.