ARXPS analysis of a GaAs/GaInP heterointerface with application in III–V multijunction solar cells

Author

Gabás, M. ; López-Escalante, M.C. ; Algora, C. ; Rey-Stolle, I. ; Galiana, B. ; Palanco, S. ; Ramos-Barrado, J.R.

Author_Institution

Dipt. de Fis. Aplic. I, Univ. de Malaga, Malaga, Spain

fYear

2012

fDate

3-8 June 2012

Abstract

In this contribution, angle-resolved X-ray photoelectron spectroscopy is used to explore the extension and nature of a GaAs/GaInP heterointerface. This bilayer structure constitutes a very common interface in a multilayered III-V solar cell. Our results show a wide indium penetration into the GaAs layer, while phosphorous diffusion is much less important. The physico-chemical nature of such interface and its depth could deleteriously impact the solar cell performance. Our results probe the formation of spurious phases which may profoundly affect the interface behavior.

Keywords

III-V semiconductors; X-ray photoelectron spectra; diffusion; gallium arsenide; indium compounds; solar cells; ARXPS analysis; GaAs-GaInP; angle-resolved X-ray photoelectron spectroscopy; bilayer structure; interface behavior; multilayered III-V solar cell; phosphorous diffusion; physico-chemical nature; Abstracts; Gain measurement; Gallium arsenide; Signal resolution; III–V semiconductor materials; X-ray photoelectron spectroscopy; gallium arsenide; heterojunctions; interface analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE

Conference_Location

Austin, TX

ISSN

0160-8371

Print_ISBN

978-1-4673-0064-3

Type

conf

DOI

10.1109/PVSC.2012.6317641

Filename

6317641