DocumentCode
3514008
Title
Advanced diamond based metal matrix composites for thermal management of RF devices
Author
Loutfy, Kevin ; Hirotsuru, Hideki
Author_Institution
Nano Mater. Int. Corp. (NMIC), Tucson, AZ, USA
fYear
2011
fDate
18-19 April 2011
Firstpage
1
Lastpage
5
Abstract
GaN based RF devices are pushing the threshold on existing thermal management materials. High heat fluxes and the need for a heat spreader material with low CTE that is a close match to the device material (e.g. Silicon Carbide) is driving the need for higher thermal conductivity (>;450W/mK) solutions. Aluminum diamond has been developed to meet this need with a CTE of 7.5ppm/K and thermal conductivity of 500W/mK.
Keywords
III-V semiconductors; aluminium; composite materials; diamond; radiofrequency amplifiers; thermal conductivity; thermal management (packaging); Al-C; GaN; RF devices; aluminum diamond; diamond based metal matrix composites; heat fluxes; heat spreader material; thermal conductivity; thermal management; Diamond-like carbon; Heating; Lead; Matrix converters; Radio frequency; aluminum diamond; diamond MMC; high TC and low CTE material; high conductivity heat spreader; metal matrix composite;
fLanguage
English
Publisher
ieee
Conference_Titel
Wireless and Microwave Technology Conference (WAMICON), 2011 IEEE 12th Annual
Conference_Location
Clearwater Beach, FL
Print_ISBN
978-1-61284-081-9
Type
conf
DOI
10.1109/WAMICON.2011.5872860
Filename
5872860
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