Title :
Study of n-channel MOSFETs with an enclosed-gate layout in a 0.18 micron CMOS technology
Author :
Chen, Li ; Gingrich, Douglas M.
Author_Institution :
Dept. of Electr. & Comput. Eng., South Dakota Sch. of Mines & Technol., Rapid City, SD, USA
Abstract :
Enclosed-gate layout MOSFETs with guard rings have been fabricated in a commercial 0.18 micron CMOS technology. The static, signal, and noise performance of the MOSFETs were determined before and after being subjected to ionizing radiation. The transistor design could provide the basis for low-noise radiation-tolerant circuits.
Keywords :
CMOS integrated circuits; MOSFET; ionisation chambers; 0.18 mum; CMOS technology; enclosed-gate layout; guard rings; ionizing radiation; low-noise radiation-tolerant circuits; n-channel MOSFET; transistor design; CMOS process; CMOS technology; Geometry; Integrated circuit noise; Integrated circuit technology; Ionizing radiation; Leakage current; MOSFETs; Semiconductor device manufacture; Transistors;
Conference_Titel :
Nuclear Science Symposium Conference Record, 2004 IEEE
Print_ISBN :
0-7803-8700-7
Electronic_ISBN :
1082-3654
DOI :
10.1109/NSSMIC.2004.1462447
