DocumentCode :
3514168
Title :
Dielectric and electrical conductivity studies of flux grown KTiOPO 4 and KRbTiOPO4 single crystals
Author :
Selvasekarapandian, S. ; Vivekanandan, K. ; Kolandaivel, P. ; Sebastian, M.T. ; Suma, S.
Author_Institution :
Dept. of Phys., Bharathiar Univ., Coimbatore, India
Volume :
2
fYear :
1997
fDate :
25 -30 May 1997
Firstpage :
999
Abstract :
Single crystals of KTiOPO4 (KTP) and K0.5Rb 0.5TiOPO4 have been grown using the slow cooling flux method. For the growth of KTP crystals, two types of fluxes have been used (i) phosphate flux (ii) tungstate flux. Dielectric constant (K), dielectric loss (tan δ) and electrical conductivity (σ) of these crystals are measured at different frequencies (10 KHz-10 MHz) and temperatures (273 K-573 K). The effect of the applied frequency and temperature on the dielectric constant, dielectric loss and conductivity are investigated. KRbTP crystals dielectric constant and electrical conductivity are found to be less when compared to KTP due to the presence of Rb ion. The dielectric and electrical conductivity results indicate that the tungsten (W6+) impurity is incorporated into the tungsten based flux grown KTP crystals at Ti4+ sites which was used as part of the solvent system
Keywords :
crystal growth from solution; dielectric losses; electrical conductivity; ferroelectric materials; permittivity; potassium compounds; rubidium compounds; 10 kHz to 10 MHz; 273 to 573 K; KRbTP; KRbTiOPO4; KTP; KTiOPO4; dielectric constant; dielectric loss; electrical conductivity; flux growth; single crystal; Conductivity measurement; Cooling; Crystals; Dielectric constant; Dielectric loss measurement; Dielectric losses; Dielectric measurements; Frequency; Temperature; Tungsten;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Properties and Applications of Dielectric Materials, 1997., Proceedings of the 5th International Conference on
Conference_Location :
Seoul
Print_ISBN :
0-7803-2651-2
Type :
conf
DOI :
10.1109/ICPADM.1997.616613
Filename :
616613
Link To Document :
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