Effect of parameter variations on the current-voltage behavior of AlGaAs tunnel junction models

Author

Narasimhan, Vijay K. ; Yastrebova, Natalya ; Valdivia, C.E. ; Hall, Trevor J. ; Hinzer, Karin ; Masson, Denis ; Fafard, Simon ; Jaouad, Abdelatif ; Arès, Richard ; Aimez, Vincent

Author_Institution

Univ. of Ottawa, Ottawa, ON

fYear

2008

fDate

15-15 Oct. 2008

Firstpage

165

Lastpage

168

Abstract

To optimize the design of multi-junction photovoltaic devices, robust models of the tunnel junctions connecting sub-cells are essential. In this paper, we describe the effects of varying key parameters in a model of an AlGaAs tunnel junction. We noted two peaks in the current-voltage behavior of the AlGaAs tunnel junction under consideration. We found that the effective Richardson constant scaling factors in the model primarily affected the magnitude of the main peak. The p++ doping concentration impacted the height of both peaks, while the n++ doping concentration changed the magnitude of the main peak and shifted the secondary peak.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor device models; solar cells; AlGaAs; Richardson constant scaling factors; current-voltage behavior; multi-junction photovoltaic devices; n++ doping concentration; p++ doping concentration; tunnel junction models; Current density; Doping; Equivalent circuits; III-V semiconductor materials; Optical devices; Photovoltaic systems; Robustness; Semiconductor process modeling; Solar power generation; Voltage; multi-junction; photovoltaic; tunnel junction model;

fLanguage

English

Publisher

ieee

Conference_Titel

Microsystems and Nanoelectronics Research Conference, 2008. MNRC 2008. 1st

Conference_Location

Ottawa, Ont.

Print_ISBN

978-1-4244-2920-2

Electronic_ISBN

978-1-4244-2921-9

Type

conf

DOI

10.1109/MNRC.2008.4683404

Filename

4683404