DocumentCode
3514334
Title
A model inaccuracy aware design methodology of millimeter-wave CMOS tuned amplifiers
Author
Shin, Shih-Chieh ; Dawn, Debasis ; Yeh, David ; Laskar, Joy
Author_Institution
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
fYear
2011
fDate
18-19 April 2011
Firstpage
1
Lastpage
6
Abstract
This paper presents a systematic design methodology of millimeter wave (mm-wave) CMOS tuned amplifier which, for the first time to the best of authors´ knowledge, takes the model inaccuracy at mm-wave frequencies into design consideration. Millimeter-wave models for both passive and active components are developed based on the standard foundry provided models with extra critical variation components which represent modeling uncertainties. The proposed model is verified through a comparison with the measured results of the test structures. The design methodology of tolerating the modeling uncertainties is demonstrated by a design example of a 65 nm CMOS 57-64 GHz low noise amplifier, which has a 20 dB gain and a minimum 5 dB noise figure with 26 mA current consumption under 1 V supply.
Keywords
CMOS analogue integrated circuits; MIMIC; low noise amplifiers; millimetre wave amplifiers; active components; current 26 mA; current consumption; frequency 57 GHz to 64 GHz; gain 20 dB; low noise amplifier; millimeter-wave CMOS tuned amplifiers; noise figure 5 dB; passive components; size 65 nm; systematic design methodology; test structures; voltage 1 V; Capacitors; Foundries; Inductors; Logic gates; Power transmission lines; Shunt (electrical); Transmission line measurements; CMOS; low noise amplifier (LNA); millimeter-wave (mmW); tuned-amplifier;
fLanguage
English
Publisher
ieee
Conference_Titel
Wireless and Microwave Technology Conference (WAMICON), 2011 IEEE 12th Annual
Conference_Location
Clearwater Beach, FL
Print_ISBN
978-1-61284-081-9
Type
conf
DOI
10.1109/WAMICON.2011.5872876
Filename
5872876
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