Title :
A comprehensive analytical and experimental investigation of wire bond life for IGBT modules
Author :
Chen, Yan ; Wu, Xin ; Fedchenia, Igor ; Gorbounov, Mikhail ; Blasko, Vladimir ; Veronesi, William ; Slade, Culp
Author_Institution :
United Technol. Res. Center, Hatford, CT, USA
Abstract :
This paper presents a comprehensive study on the wire bond life for Insulated Gate Bipolar Transistors (IGBT). The main elements are as follows: 1) Substantial non-uniformity in temperature distribution across the chip area was revealed; 2) Additional electrical resistance at the wire bonds was discovered, which can elevate the local temperature and shorten the wire bond life; 3) Thermo-structural simulation exhibited a characteristic failure sequence of the wire bonds, and the overall bond life is determined by a critical bond; 4) By incorporating the above findings, the predicted IGBT life showed good agreement with the life testing results. At the end of the paper, suggestions are outlined to improve the design of wire bonds for IGBTs and other power semiconductor modules.
Keywords :
insulated gate bipolar transistors; lead bonding; power bipolar transistors; power field effect transistors; semiconductor device metallisation; semiconductor device reliability; IGBT life; IGBT module; electrical resistance; insulated gate bipolar transistors; power semiconductor module; temperature distribution non-uniformity; thermo structural simulation; wire bond life; Finite element methods; Insulated gate bipolar transistors; Temperature distribution; Temperature measurement; Testing; Thermal analysis; Wires;
Conference_Titel :
Applied Power Electronics Conference and Exposition (APEC), 2012 Twenty-Seventh Annual IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
978-1-4577-1215-9
Electronic_ISBN :
978-1-4577-1214-2
DOI :
10.1109/APEC.2012.6166143
