Title :
The design and testing challenges of High Voltage RF circuits
Author_Institution :
Electromagn. & RFICs Technol. Centre, Roke Manor Res. Ltd., Romsey, UK
Abstract :
The design and testing challenges of High Voltage RF circuits are discussed with particular reference to a recent Solid State Power Amplifier design. Using a single Si MOSFET device, we were able to produce over 2kW of pulsed power at VHF frequencies.
Keywords :
MOSFET; integrated circuit design; integrated circuit testing; power amplifiers; power integrated circuits; radiofrequency integrated circuits; silicon; MOSFET device; Si; VHF frequency; high voltage RF circuit; pulsed power; solid state power amplifier design; Consumer electronics; Earth; Power MOSFET; Radio frequency; Temperature measurement; Topology; Design; High Voltage; High Voltage Test Chamber; Solid State Power Amplfier; Test;
Conference_Titel :
Wireless and Microwave Technology Conference (WAMICON), 2011 IEEE 12th Annual
Conference_Location :
Clearwater Beach, FL
Print_ISBN :
978-1-61284-081-9
DOI :
10.1109/WAMICON.2011.5872887
