Title :
A 20 W GaN HEMT VHF/UHF Class-D power amplifier
Author :
Lin, Song ; Fathy, Aly E.
Author_Institution :
Miteq Inc. Hauppauge, Hauppauge, NY, USA
Abstract :
A 50 to 550 MHz wideband gallium nitride (GaN) HEMT power amplifier with over 20 W output power and 63% drain efficiency has been successfully developed. The demonstrated wideband power amplifier utilizes two GaN HEMTs and operates in a push-pull voltage mode Class D (VMCD). The design is based on a large signal simulation to optimize the power amplifier´s output power and efficiency. To assure a wideband operation, a coaxial line impedance transformer has been used as part of the input matching network; meanwhile, a wideband a 1:1 ferrite loaded balun and low pass filters are utilized on the amplifier´s output side instead of the conventional serial harmonic termination.
Keywords :
UHF filters; UHF power amplifiers; VHF amplifiers; VHF filters; baluns; high electron mobility transistors; impedance convertors; low-pass filters; wideband amplifiers; GaN; HEMT; VHF-UHF class-D power amplifier; coaxial line impedance transformer; conventional serial harmonic termination; efficiency 63 percent; ferrite loaded balun; frequency 50 MHz to 550 MHz; input matching network; low pass filters; power 20 W; push-pull voltage mode Class D; wideband power amplifier; Gallium nitride; HEMTs; Harmonic analysis; Impedance matching; Power amplifiers; Power generation; Wideband; Class D Power Amplifier; GaN; UHF; VHF;
Conference_Titel :
Wireless and Microwave Technology Conference (WAMICON), 2011 IEEE 12th Annual
Conference_Location :
Clearwater Beach, FL
Print_ISBN :
978-1-61284-081-9
DOI :
10.1109/WAMICON.2011.5872897
