Title :
Graphene: Status and prospects as a microwave material
Author :
Asbeck, Peter ; Lee, Kangmu ; Moon, Jeong-Sun
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California San Diego, La Jolla, CA, USA
Abstract :
Graphene offers new opportunities for the optimization of high frequency FETs by virtue of high carrier velocity, excellent scaling properties, configurability as electron or hole channel devices, and limited scattering. It also offers unique features such as quadratic variation of current with gate voltage, and problems, such as limitations in voltage and poor pinchoff characteristics. This paper reviews graphene material properties, and status and prospects of research efforts to demonstrate graphene-based microwave and mm-wave transistors.
Keywords :
graphene; millimetre wave field effect transistors; millimetre wave materials; C; graphene material property; high frequency FET; hole channel devices; microwave material; millimeter wave transistors; Electric fields; Epitaxial growth; FETs; Lead; Logic gates; Mixers; Optical variables measurement; carbon electronics; microwave FETs; microwave materials;
Conference_Titel :
Wireless and Microwave Technology Conference (WAMICON), 2011 IEEE 12th Annual
Conference_Location :
Clearwater Beach, FL
Print_ISBN :
978-1-61284-081-9
DOI :
10.1109/WAMICON.2011.5872898