DocumentCode
3514677
Title
Silicon-Germanium as an Enabling IC Technology for Extreme Environment Electronics
Author
Cressler, John D.
Author_Institution
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA
fYear
2008
fDate
1-8 March 2008
Firstpage
1
Lastpage
7
Abstract
Extreme environments" represents an important niche venue for electronic components, and spans the operation of electronics in surroundings lying outside the domain of conventional commercial and military specifications. Such extreme environments would include, for instance, operation down to very low temperatures (e.g., to 77 K or even 4.2 K), 2) operation up to very high temperatures (e.g., to 200degC or even 300degC), 3) operation across very wide and cyclic temperature swings, and 4) operation in a radiation-rich environment (e.g., space), or even all four simultaneously. We have previously argued that the unique bandgap-engineered features of SiGe HBTs offer great utility to simultaneously satisfy all four of these extreme environment domains, potentially with little or no process modification, ultimately providing compelling advantages at the IC and system level, across a wide class of commercial and defense applications. In the present work, we detail the application of SiGe technology for building electronic components of interest to NASA and the space community for operation in one of the "classic" extreme environments - on the lunar surface.
Keywords
Ge-Si alloys; cryogenic electronics; heterojunction bipolar transistors; high-temperature electronics; space vehicle electronics; Ge-Si; HBT; IC technology; NASA; extreme environment electronics; lunar surface; radiation-rich environment; very high temperatures; very low temperatures; BiCMOS integrated circuits; Electronic components; Electronic packaging thermal management; Germanium silicon alloys; Military computing; Moon; NASA; Silicon germanium; Space technology; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Aerospace Conference, 2008 IEEE
Conference_Location
Big Sky, MT
ISSN
1095-323X
Print_ISBN
978-1-4244-1487-1
Electronic_ISBN
1095-323X
Type
conf
DOI
10.1109/AERO.2008.4526489
Filename
4526489
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