Title :
High-density bidirectional rectifier for next generation 380-V DC distribution system
Author :
Hahashi, Yusuke ; Mino, Masato
Author_Institution :
R&D Headquarters, NTT Facilities, Tokyo, Japan
Abstract :
A high-density bidirectional rectifier was developed not only for telecom and data center applications but also for next generation 380-V DC distribution systems. A conventional rectifier consists of an AC 200-V/DC 380-V power factor correction (PFC) converter and an isolated DC 380-V/DC 380-V converter, and the power flow is unidirectional. Two approaches are proposed for creating a high-density bidirectional rectifier for future applications. One uses Silicon Carbide (SiC) JFETs and SBDs for the bidirectional three-phase PWM conversion on behalf of the conventional unidirectional PFC converter. The other uses a series-parallel combination methodology of highly integrated low-voltage and low-power dc-dc converters to create an isolated dc-dc converter to create a higher density. A prototype of a rectifier with 5-kW of output power was developed and experimentally verified. A volume reduction of 30% is expected. The details and the methodology for creating this higher density bidirectional rectifier are described in this paper.
Keywords :
DC-DC power convertors; load flow; power distribution; power factor correction; rectifying circuits; JFET; SBD; data center; dc-dc converters; high-density bidirectional rectifier; next generation dc distribution system; power 5 kW; power factor correction; power flow; silicon carbide; telecom; unidirectional PFC converter; voltage 380 V; Power generation; Pulse width modulation converters; Rectifiers; Semiconductor diodes; Silicon carbide; Topology; Voltage control;
Conference_Titel :
Applied Power Electronics Conference and Exposition (APEC), 2012 Twenty-Seventh Annual IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
978-1-4577-1215-9
Electronic_ISBN :
978-1-4577-1214-2
DOI :
10.1109/APEC.2012.6166166
