Amorphous silicon detector and thin film transistor technology for large area imaging of X-rays

Author

Nathan, A. ; Murthy, R.V.R. ; Ma, Q. ; Park, B. ; Pham, H. ; Sazonov, A.

Author_Institution

Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada

Volume

1

fYear

2000

fDate

2000

Firstpage

77

Abstract

This paper will review amorphous silicon imaging technology in terms of the detector operating principles, electrical and optoelectronic characteristics, and stability. Also, issues pertinent to thin film transistor stability will be presented along with optimization of materials and processing conditions for reduced V_T-shift and leakage current. Selected results are shown for X-ray and optical detectors, thin film transistors, and integrated X-ray pixel structures. Extension of the current fabrication processes to low (<100°C) temperature, enabling fabrication of thin film electronics on flexible (polymer) substrates, will also be discussed along with preliminary results

Keywords

X-ray detection; X-ray imaging; amorphous semiconductors; elemental semiconductors; silicon; silicon radiation detectors; thin film transistors; 100 C; Si; amorphous silicon detector; fabrication; flexible polymer substrate; large area X-ray imaging; leakage current; pixel integration; stability; thin film transistor; threshold voltage; Amorphous silicon; Leakage current; Optical detectors; Optical device fabrication; Optical imaging; Optical materials; Polymer films; Stability; Temperature; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 2000. Proceedings. 2000 22nd International Conference on

Conference_Location

Nis

Print_ISBN

0-7803-5235-1

Type

conf

DOI

10.1109/ICMEL.2000.840533

Filename

840533