Low temperature analysis of quantum dot solar cells

Author

Polly, Stephen J. ; Bittner, Zachary S. ; Baile, Christopher G. ; Forbes, David V. ; Dai, Yushuai ; Hubbard, Seth M.

Author_Institution

Rochester Inst. of Technol., Rochester, NY, USA

fYear

2012

fDate

3-8 June 2012

Abstract

The low temperature operation of GaAs solar cells incorporating a superlattice of InAs quantum dots (QD) was studied to explore carrier removal mechanisms. Dark current-voltage characteristics of QD devices did not show a temperature dependence, which suggests a tunneling-dominated recombination mechanism. Two-photon extraction was investigated using a pump-probe method, but no evidence of two-photon was observed. Finally, 1-sun measurements revealed a resonant-tunneling contribution to the current in the QD devices, which became prominent as temperature was reduced.

Keywords

gallium arsenide; indium compounds; measurement systems; quantum dots; resonant tunnelling; solar cells; superlattices; 1-sun measurements; GaAs; InAs; QD devices; carrier removal mechanisms; dark current-voltage characteristics; low temperature analysis; pump-probe method; quantum dot solar cells; resonant-tunneling contribution; superlattice; temperature dependence; tunneling-dominated recombination mechanism; two-photon extraction; Atmospheric measurements; Gallium arsenide; Radiative recombination; Strain; Temperature measurement; InAs; Quantum Dot. Tunneling; Two-Photon;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE

Conference_Location

Austin, TX

ISSN

0160-8371

Print_ISBN

978-1-4673-0064-3

Type

conf

DOI

10.1109/PVSC.2012.6317693

Filename

6317693