Title :
Structural and dielectric properties of the PZT heterolayered films prepared by sol-gel technique
Author :
Lee, Sung-gap ; Park, In-Gil ; Chung, Jang-Ho ; Lee, Young-Hie
Author_Institution :
Seonam Univ., Chonbuk, South Korea
Abstract :
Ferroelectric PZT heterolayered thin films were fabricated by the alkoxide-based sol-gel method. The PZT(20/80) and PZT(80/20) stock solutions were made and spin-coated on the Pt/Ti/SiO2/Si substrate by turns. Each layer was dried to remove the organic materials at 300[°C] for 30[min], and sintered at 650[°C] for 1[hr]. This procedure was repeated several times. The thickness of PZT films obtained by one-cycle drying/sintering was about 800[Å]. Relative dielectric constant and resistivity of the PZT films increased with increasing thickness of films, among which the 6-coated PZT heterolayered film (PZT-6) showed the highest values of 1385, 5.8×108[Q-cm], respectively. As the thickness of the films increases, remanent polarization increased and coercive field decreased, and the values of the PZT-6 film were 8.13[μC/cm2 ] and 12.5[kV/cm], respectively. The leakage current density of the PZT-6 film at 5[V] was 88.42[pA/cm2]
Keywords :
DRAM chips; coercive force; dielectric polarisation; drying; ferroelectric thin films; lead compounds; permittivity; piezoceramics; sintering; sol-gel processing; 1 h; 30 min; 300 degC; 5 V; 650 degC; 800 angstrom; PZT-Pt-Ti-SiO2-Si; PbZrO3TiO3-Pt-Ti-SiO2-Si; Pt-Ti-SiO2-Si; coercive field; ferroelectric heterolayered thin films; leakage current density; one-cycle drying/sintering; relative dielectric constant; remanent polarization; sol-gel technique; spin-coating; Coatings; Dielectric constant; Dielectric substrates; Dielectric thin films; Ferroelectric films; Ferroelectric materials; Leakage current; Optical films; Polarization; Thin film transistors;
Conference_Titel :
Properties and Applications of Dielectric Materials, 1997., Proceedings of the 5th International Conference on
Conference_Location :
Seoul
Print_ISBN :
0-7803-2651-2
DOI :
10.1109/ICPADM.1997.616617