New figures of merit qualifying devices and amplifiers, operating in switched mode

Author

Bahi, A. ; Villegas, M. ; Diet, A. ; Baudoin, G.

Author_Institution

ESYCOM, Univ. PARIS-EST, Noisy Le Grand, France

fYear

2011

fDate

18-19 April 2011

Firstpage

1

Lastpage

5

Abstract

In the context of mobile communication and connectivity system evolution, new transmitter architectures should be studied in order to design nomadic multiradio low consumption transceiver. In term of efficiency, the most important element is the amplifier. In order to obtain high efficiency performance, it is possible to use several architectures associated with switched amplifier. In this paper, we propose different figures of merit established from DC characteristics of a device used in switched mode. We confirmed the validity of this methodology by designing several class E amplifiers using P-HEMT depletion transistor. And, we propose a representation of the device potential by using the performance factor.

Keywords

UHF amplifiers; high electron mobility transistors; microwave amplifiers; microwave field effect transistors; mobile radio; radio transceivers; radiofrequency amplifiers; switching circuits; P-HEMT depletion transistor; class E amplifiers; connectivity system evolution; figures of merit; frequency 800 MHz to 6 GHz; low consumption transceiver; mobile communication; nomadic multiradio design; switched mode amplifier; transmitter architectures; CMOS integrated circuits; HEMTs; Microwave FETs; Microwave amplifiers; Microwave circuits; Microwave oscillators; Switches; HEMT; Transceiver; class E; figures of merit (FOM); switched mode amplifier;

fLanguage

English

Publisher

ieee

Conference_Titel

Wireless and Microwave Technology Conference (WAMICON), 2011 IEEE 12th Annual

Conference_Location

Clearwater Beach, FL

Print_ISBN

978-1-61284-081-9

Type

conf

DOI

10.1109/WAMICON.2011.5872910

Filename

5872910