Title :
A study of varied threshold voltage MOSFET (VTMOS) performance and principle
Author :
Xia, Zenglang ; Ge, Yan ; Zhao, Yuanfu
Author_Institution :
Beijing Microelectron. Technol. Inst., China
Abstract :
In this paper, we suggest a novel operation of a SOI MOSFET, varied threshold voltage MOSFET (VTMOS), which can work very well under ultra-low voltage(0.6 V and below) in VLSI circuits. Experiments show that the threshold voltage of the device varies with its gate voltage, which results in better performance than conventional SOI MOSFET (for example, larger drive current and lower leakage). We also provide two-dimensional (2-D) device simulation to perspective its operational principle
Keywords :
MOSFET; low-power electronics; silicon-on-insulator; 0.6 V; SOI MOSFET; threshold voltage; two-dimensional device simulation; ultra-low voltage operation; varied threshold voltage MOSFET; Computational modeling; Doping; MOSFET circuits; Maintenance engineering; Power dissipation; Power engineering and energy; Power supplies; Satellites; Threshold voltage; Very large scale integration;
Conference_Titel :
Microelectronics, 2000. Proceedings. 2000 22nd International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-5235-1
DOI :
10.1109/ICMEL.2000.840545
