Control of Ga profiles in (AgCu)(InGa)Se2 absorber layers deposited on polyimide substrates

Author

Hanket, Gregory M. ; Thompson, Christopher P. ; Larsen, Jes K. ; Eser, Erten ; Shafarman, William N.

Author_Institution

Inst. of Energy Conversion, Univ. of Delaware, Newark, DE, USA

fYear

2012

fDate

3-8 June 2012

Abstract

Modification of Ga depth profiles in Cu(InGa)Se₂ films on polyimide substrates has coincided with device efficiencies approaching 19% at temperatures at least 100°C lower than on glass substrates. In the present study, (AgCu)(InGa)Se₂ films with nominal bandgaps E_g ≈ 1.4 eV have been deposited on polyimide substrates using various three-stage deposition processes to modify Ga depth profiles. Devices were characterized by J-V and quantum efficiency measurements for comparison to their Ga profiles. The highest-efficiency device had η = 17.9% with device parameters V_OC = 744 mV, J_SC = 32.2 mA/cm², and FF = 74.7%.

Keywords

gallium; indium compounds; silver compounds; solar power; vapour deposition; (AgCu)(InGa)Se₂; Ga depth profiles; J-V measurements; absorber layers; glass substrates; nominal bandgaps; polyimide substrates; quantum efficiency measurements; temperatures; three-stage deposition processes; Films; Performance evaluation; Photonic band gap; Polyimides; Substrates; Surface treatment; Temperature measurement; Solar power generation; copper compounds; photovoltaic cells; semiconductor device manufacture; silver; thin film devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE

Conference_Location

Austin, TX

ISSN

0160-8371

Print_ISBN

978-1-4673-0064-3

Type

conf

DOI

10.1109/PVSC.2012.6317696

Filename

6317696