Evaluating dynamic reliability of power MOSFETs in low voltage hard-switched applications

In this paper, a new method is presented to monitor and analyze the thermal behavior of power MOSFETs as a response to transient and steady-state operational conditions. In the proposed solution, with different DUT-cards, it is possible to investigate different available packages for devices. The proposed method is a powerful tool for research and development activities where selecting the proper device for specific applications has a vital role. Examples of real application scenarios such as power tools are discussed where both current and voltage stresses have major heating impact on power MOSFETs and may cause thermal runaway and failure. In different tests we have compared MOSFETs considering parameters such as RDSon, die size and package type. A simulating tool using MATLAB predicts the transient and steady-state behavior of this system which can be used for further investigation.