Title :
The modification of drift-diffusion model for short base transport
Author :
Karamarkovic, J.P. ; Jankovic, N.D. ; Dambacher, J.
Author_Institution :
Fac. of Electron. Eng., Nis Univ., Serbia
Abstract :
The results of modified drift-diffusion model have been compared with results obtained by Monte Carlo simulation. The modification of drift-diffusion model includes velocity overshoot value at the end of quasi-neutral base, and reduction of diffusion coefficient, introducing two fitting parameters. The obtained results show fairly good agreement with MC simulation results
Keywords :
Monte Carlo methods; semiconductor device models; Monte Carlo simulation; bipolar semiconductor device; drift-diffusion model; quasi-neutral base; short base transport; velocity overshoot; Boundary conditions; Distribution functions; Electric variables; Equations; Monte Carlo methods; Scattering parameters; Semiconductor devices; Space charge; Thyristors; Transistors;
Conference_Titel :
Microelectronics, 2000. Proceedings. 2000 22nd International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-5235-1
DOI :
10.1109/ICMEL.2000.840557
