DocumentCode :
351489
Title :
An analytical model for electrical characteristics of short geometry LDD and short channel FOLD MOSFETs
Author :
Kumar, Anil ; Kalra, Ekta ; Haldar, Subhasis ; Gupta, R.S.
Author_Institution :
Dept. of Electron. Sci., Delhi Univ., India
Volume :
1
fYear :
2000
fDate :
2000
Firstpage :
213
Abstract :
An analytical model for electrical characteristics of short geometry LDD MOSFET and short channel FOLD MOSFET is developed. The results so obtained are in good agreement with the experimental data showing the validity of the model in the submicrometer range
Keywords :
MOSFET; semiconductor device models; analytical model; electrical characteristics; short channel FOLD MOSFET; short geometry LDD MOSFET; Analytical models; Electric variables; Electrodes; Geometry; Immune system; Interpolation; Lagrangian functions; MOSFETs; Surface resistance; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronics, 2000. Proceedings. 2000 22nd International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-5235-1
Type :
conf
DOI :
10.1109/ICMEL.2000.840558
Filename :
840558
Link To Document :
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