DocumentCode
351490
Title
The effect of self-heating on hot-carrier effects in deep submicron SOI/NMOS
Author
Xia, Zenglang ; Li, Yinbo ; Zhao, Yuanfu
Author_Institution
Beijing Microelectron. Technol. Inst., China
Volume
1
fYear
2000
fDate
2000
Firstpage
221
Abstract
This paper reports on the effect of self-heating on hot-carrier effects in deep submicron SOI/NMOS. The impact of the hot carrier is studied as a function of buried oxide thickness. The simulation results show that the self-heating in deep submicron SOI/NMOS becomes serious with the buried oxide thickness increasing, and thus leads to the peak electric field down in the channel region near drain, which decreases the hot-carrier effects in short channel devices
Keywords
MOSFET; hot carriers; silicon-on-insulator; buried oxide; deep submicron SOI NMOSFET; electric field; hot carrier effect; self-heating; short channel device; Conducting materials; Heating; Hot carrier effects; Hot carriers; Lattices; MOS devices; Optical scattering; Silicon; Temperature; Thermal conductivity;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics, 2000. Proceedings. 2000 22nd International Conference on
Conference_Location
Nis
Print_ISBN
0-7803-5235-1
Type
conf
DOI
10.1109/ICMEL.2000.840560
Filename
840560
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