Title :
On understanding and using SiC power JFETs to design a 100 W active clamp forward converter
Author :
Basu, Supratim ; Undeland, Tore M.
Author_Institution :
BOSE Res. PVT. Ltd., Bangalore, India
Abstract :
With the commercial availability of normally-off three-terminal SiC VJFETs, their acceptance is growing in consideration to their having excellent low switching loss, high temperature operation and high voltage rating capabilities. Their ability to significantly improve converter efficiency and improve performance in high temperature and high voltage applications, make them the most suitable candidate for the next generation of Power Semiconductors. This paper investigates the influence of the gate drive on the switching characteristics of the device and highlights suitable design strategies for driving a 100W active clamp forward converter.
Keywords :
junction gate field effect transistors; power convertors; power field effect transistors; silicon compounds; wide band gap semiconductors; SiC; active clamp forward converter; converter efficiency; gate drive; high-temperature high-voltage applications; normally-off three-terminal VJFET; power 100 W; power semiconductors; silicon carbide power JFET; switching loss; temperature operation; voltage rating capabilities; Capacitance; Capacitors; JFETs; Logic gates; Silicon carbide; Switches; Temperature;
Conference_Titel :
Applied Power Electronics Conference and Exposition (APEC), 2012 Twenty-Seventh Annual IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
978-1-4577-1215-9
Electronic_ISBN :
978-1-4577-1214-2
DOI :
10.1109/APEC.2012.6166177
