Title :
Molecular layer epitaxy for future devices
Author :
Kurabayashi, Tom ; Nishizawa, Jun-ichi
Author_Institution :
Sendai Res. Center, Telecommun. Adv. Org., Japan
Abstract :
Molecular layer epitaxies (MLE) of GaAs related compounds and Si with SiO2 deposition has been developed to realize THz operating devices. At a lower process temperature than for conventional growth methods, device quality epitaxial layers were achieved by molecular layer epitaxy, In GaAs MLE, 100 Å scale static induction transistors are fabricated by MLE operating in a mixed ballistic-tunneling mode or in the pure tunneling mode. For device applications basic research in the fields of surface science and material science are studied
Keywords :
III-V semiconductors; gallium arsenide; microwave field effect transistors; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; static induction transistors; tunnel transistors; 100 angstrom; GaAs; device quality epitaxial layers; mixed ballistic-tunneling mode; molecular layer epitaxy; pure tunneling mode; static induction transistors; Ash; Electrons; Epitaxial growth; Epitaxial layers; Fabrication; Gallium arsenide; Materials science and technology; Maximum likelihood estimation; Temperature; Tunneling;
Conference_Titel :
Microelectronics, 2000. Proceedings. 2000 22nd International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-5235-1
DOI :
10.1109/ICMEL.2000.840563
