• DocumentCode
    351493
  • Title

    Self-organized growth of Si/Si and GexSi1-x/Si superlattices

  • Author

    Klimovskaya, A. ; Ostrovskii, I. ; Gule, E. ; Prokopenko, I.

  • Author_Institution
    Inst. of Semicond. Phys., Acad. of Sci., Kiev, Ukraine
  • Volume
    1
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    239
  • Abstract
    Si/Si and GexSi1-x/Si superlattices were grown by vapour-transport reactions. Au and Pt were used to initiate self-organized growth of different “brushes”. A low of distribution and shape of growth peculiarities has been studied by electron microscopy
  • Keywords
    Ge-Si alloys; electron microscopy; elemental semiconductors; self-assembly; semiconductor materials; semiconductor superlattices; silicon; GeSi-Si; Si-Si; electron microscopy; self-organized growth; superlattices; vapour-transport reactions; Brushes; Gold; Ice; Integrated circuit technology; Shape; Silicon; Substrates; Superlattices; Temperature; Wires;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics, 2000. Proceedings. 2000 22nd International Conference on
  • Conference_Location
    Nis
  • Print_ISBN
    0-7803-5235-1
  • Type

    conf

  • DOI
    10.1109/ICMEL.2000.840564
  • Filename
    840564
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=351493