Title :
Photoluminescence parameters in strained GaAs/InxGa1-xAs/GaAs-heterostructures
Author :
Grigor´ev, N.N. ; Gule, E.G. ; Klimovskaya, A.I. ; Dryga, Yu.A. ; Litovchenko, V.G.
Author_Institution :
Inst. of Semicond. Phys., Acad. of Sci., Kiev, Ukraine
Abstract :
The photoluminescence (PL) of InxGa1-xAs-single quantum wells (QW) grown on GaAs substrate with x ranging between 0.16 and 0.35 was studied. The thickness (d) of QW layers was about or larger than the critical one (d c). The PL parameters were found to depend on a magnitude (d-dc)/dc if d>dc. The heterostructures with QW-thickness d not exceeding the critical one d, meets conditions of homogeneously elastically strained heterostructures almost without defects. The energy levels in QW´s and PL bands (EPL ) in these heterostructures may be described theoretically, and the FWHM of the band approaches its physical limit. The heterostructures with d>dc have a defect concentration (≈1011 cm-2) increasing with the increase of thickness. A large long-range inhomogeneous redistribution of In atoms probably occurs in the highly strained heterostructures
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; interface states; interface structure; photoluminescence; semiconductor quantum wells; spectral line breadth; FWHM; GaAs; GaAs substrate; GaAs-InGaAs-GaAs; defect concentration; energy levels; highly strained heterostructures; long-range inhomogeneous redistribution; photoluminescence; single quantum wells; strained GaAs/InxGa1-xAs/GaAs-heterostructures; thickness; Atomic layer deposition; Capacitive sensors; Energy states; Gallium arsenide; Lattices; Light scattering; Morphology; Page description languages; Photoluminescence; Raman scattering;
Conference_Titel :
Microelectronics, 2000. Proceedings. 2000 22nd International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-5235-1
DOI :
10.1109/ICMEL.2000.840574
