A study on the properties and fabrication of BaTiO3 thin films by the RF sputtering

BaTiO₃ thin films were prepared on Pt(100)/SiO₂ /Si(100) substrates by RF sputtering, whose structural, crystallographic, and electrical properties were examined according to the deposition conditions and annealing temperatures. The optimal Ar/O ₂ gas flow rate, sputtering pressure, RF power and annealing temperature were 4/1, 12[mTorr], 120[W] and 650[°C] for 1[hr], respectively. From the results of X-ray diffraction (XRD) and D-E hysteresis characteristics, BaTiO₃ thin films deposited at the optimal conditions showed a ferroelectric phase. The growth rate of deposited film was about 0.75[Å/sec], and the dielectric constant and dielectric loss were about 683 and 0.05, respectively