DocumentCode
351501
Title
Analysis of Fowler-Nordheim injection in NO nitrided gate oxide grown on n-type 4H-SiC
Author
Li, Hui-feng ; Dimitrijev, Sima ; Sweatman, Denis ; Harrison, H.Barry
Author_Institution
Sch. of Microelectron. Eng., Griffith Univ., Brisbane, Qld., Australia
Volume
1
fYear
2000
fDate
2000
Firstpage
331
Abstract
F-N injection in NO nitrided gate oxides, grown on n-type 4H-SiC, has been investigated at room temperature and 300°C. The results show that NO nitridation has a positive effect on the Fowler-Nordheim electron injection at high electric fields. The electron injection barrier height is very close to the theoretical value at room temperature. The temperature dependence of the electron injection barrier height is reduced by nitridation
Keywords
MIS structures; charge injection; nitridation; silicon compounds; wide band gap semiconductors; 20 C; 300 C; Fowler-Nordheim injection; MOS structure; NO; NO nitridation; SiC; electron injection barrier height; gate oxide; n-type 4H-SiC; temperature dependence; Current density; Electrons; MOS capacitors; Oxidation; Power engineering and energy; Silicon carbide; Substrates; Temperature dependence; Temperature measurement; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics, 2000. Proceedings. 2000 22nd International Conference on
Conference_Location
Nis
Print_ISBN
0-7803-5235-1
Type
conf
DOI
10.1109/ICMEL.2000.840582
Filename
840582
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