• DocumentCode
    351502
  • Title

    The X-ray and UV controlled adjustment of MOSFET threshold voltage

  • Author

    Levin, M.N. ; Kadmensky, S.G. ; Pershenkov, V.S.

  • Author_Institution
    Voronezh State Univ., Russia
  • Volume
    1
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    335
  • Abstract
    The technique for precise adjustment of MOS-devices threshold voltages using X-ray and UV irradiation is presented. The adjustment is based on formation of thermally stable charge in the phosphorus doped SiO2 layers
  • Keywords
    MOSFET; X-ray effects; ultraviolet radiation effects; MOSFET; SiO2:P; UV irradiation; X-ray irradiation; phosphorus doped SiO2 layer; thermally stable charge; threshold voltage; Annealing; CMOS process; Doping; Impurities; MOSFET circuits; Manufacturing processes; Temperature; Testing; Threshold voltage; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics, 2000. Proceedings. 2000 22nd International Conference on
  • Conference_Location
    Nis
  • Print_ISBN
    0-7803-5235-1
  • Type

    conf

  • DOI
    10.1109/ICMEL.2000.840583
  • Filename
    840583
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=351502