Title :
Investigation of the thermal stress field in a multilevel aluminium metallization in VLSI systems using finite element modelling approach
Author :
Igic, P.M. ; Mawby, P.A.
Author_Institution :
Dept. of Electr. & Electron. Eng., Univ. of Wales, Swansea, UK
Abstract :
The impact of a titanium barrier layer on the residual thermal stress in passivated multilevel aluminium metallization structure (Al lines and connecting via) is investigated using an advanced finite element approach. It is confirmed that the titanium, when is presented in the structure, can significantly improve the reliability of the Al metallization
Keywords :
VLSI; aluminium; finite element analysis; integrated circuit metallisation; integrated circuit modelling; thermal stresses; Al; Ti; VLSI system; finite element model; multilevel aluminium metallization; reliability; residual thermal stress field; titanium barrier layer; Aluminum; Artificial intelligence; Finite element methods; Metallization; Passivation; Residual stresses; Temperature; Thermal stresses; Titanium; Very large scale integration;
Conference_Titel :
Microelectronics, 2000. Proceedings. 2000 22nd International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-5235-1
DOI :
10.1109/ICMEL.2000.840586
