Title :
Backside chip effect on latent relaxation in irradiated MOS devices
Author :
Emelianov, V.V. ; Meshurov, O.V. ; Pershenko, V.S. ; Cherepko, S.V.
Author_Institution :
Res. Inst. of Sci. Instrum., Moscow, Russia
Abstract :
Latent interface trap build-up in MOS transistors is found to be governed by H2 diffusion through the silicon substrate. The main source of H2 is probably located on the back interface of the silicon wafer
Keywords :
MOSFET; X-ray effects; diffusion; electron beam effects; interface states; H2 diffusion; MOS transistor; X-ray irradiation; backside chip effect; electron irradiation; latent interface trap build-up; latent relaxation; silicon substrate; Annealing; Delay effects; Electron traps; Hydrogen; MOS devices; MOSFETs; Packaging; Silicon; Temperature; Threshold voltage;
Conference_Titel :
Microelectronics, 2000. Proceedings. 2000 22nd International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-5235-1
DOI :
10.1109/ICMEL.2000.840594
