Burst noise with normal distribution of characteristic times in sub-micron ultra-thin-oxide MOSFET´s

As a part of the study of reliability of sub-micron MOSFETs with very thin oxide layers, a noise analysis of the structure was performed in a temperature range from 100 K to 300 K. Noise of several samples exhibited pronounced burst pulses. Statistical tests of the pulses have shown, that the statistical distribution of the τ_up,i and τ_down,i times in noise samples obey rather the normal distribution, than the Poisson one, as would be expected for this kind of fluctuation. Experimental data are presented and statistical tests briefly described. Also presented is the graph of standard deviations of the characteristic times versus their mean time values and, for comparison, the theoretical curve valid for the Poisson distribution